| PART |
Description |
Maker |
| SML100A9 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω)(N沟道增强高电压功率MOS场效应管(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω))
|
TT electronics Semelab Limited
Semelab(Magnatec)
|
| SML80H12 SML100H11 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:800V,Id(cont):11.5A,Rds(on):0.67Ω)(N沟道增强高电压功率MOS场效应管(Vdss:800V,Id(cont):11.5A,Rds(on):0.67Ω))
|
SemeLAB
SEME-LAB[Seme LAB]
|
| IRFM150 2N7224 |
N-Channel Power MOSFET(Vdss:100V,Id(cont):34A,Rds(on):0.070惟)(N娌?????MOS?烘?搴??(Vdss:100V,Id(cont):34A,Rds(on):0.070惟))
N-Channel Power MOSFET(Vdss:100V,Id(cont):34A,Rds(on):0.070Ω)(N沟道功率MOS场效应管(Vdss:100V,Id(cont):34A,Rds(on):0.070Ω)) N沟道功率MOSFET（减振钢板基本：100V的，身份证（续）4A条的Rds（on）：0.070Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00V的，身份证（续）4A条的Rds（on.070Ω））
|
SEMELAB LTD
Electronic Theatre Controls, Inc.
TE Connectivity, Ltd.
Semelab(Magnatec)
SEME-LAB[Seme LAB]
|
| U4935B-ADP U4935B |
MOSFET, N, TO-3PML; Transistor type:MOSFET; Current, Id cont:2A; Resistance, Rds on:10R; Case style:TO-3PML; Current, Idm pulse:4A; Power, Pd:50W; Transistor polarity:N; Voltage, Vds max:1500V RoHS Compliant: Yes
SECAM Decoder
|
TEMIC[TEMIC Semiconductors]
|
| IRF240SMD |
N.CHANNEL POWER MOSFET
N-Channel Power MOSFET(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)) N沟道功率MOSFET（减振钢板基本：200伏，身份证（续）3.9A，的Rds（on）：0.18Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00伏，身份证（续）3.9A时，RDS（对）：0.18Ω））
|
SemeLAB
SEME-LAB[Seme LAB]
Air Cost Control
|
| 1331 1332 1320G1BLACK 1327 1300 110G9 1377G1 1377G |
CONTACT 15A CRIMP/SOLDER
POWERPOLE HOUSING & CONT.BLK
POWERPOLE HOUSING RED
POWERPOLE HOUSING & CONT.BLUE
CONTACT 25A 90DEG PCB 0.7
CONTACT 25A VERTICAL PCB MTG
POWERPOLE HOUSING & CONT. RED
PLUG FREE LATCHED 6 WAY
CONTACT 25A 90DEG PCB 0.4 联系25A90度板0.4
CONTACT 30A CRIMP/SOLDER 联系30A条卷
POWERPOLE HOUSING & CONT. RED POWERPOLE房屋
LOCKING PIN POWERPACK 锁销强力
POWERPOLE HOUSING GREEN POWERPOLE房屋
|
3M Company
Anderson Power Products, Inc.
|
| PST993 PST993C PST993D PST993E PST993F PST993G PST |
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-2.2A; On-Resistance, Rds(on):0.1ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:SOT-23; Leaded Process Compatible:No
MOSFET, P, SOT-23; Transistor type:MOSFET; Current, Id cont:2.2A; Resistance, Rds on:0.1R; Voltage, Vgs Rds on measurement:4.5V; Case style:SOT-23 (TO-236); Current, Id max:2.2A; Current, Idm pulse:10A; Marking, SMD:L1; Pins, No. RoHS Compliant: Yes
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:2.1A; On-Resistance, Rds(on):0.085ohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:SOT-23; Leaded Process Compatible:No
System Reset
|
MITSUMI ELECTRIC CO LTD
ETC[ETC]
Mitsumi Electronics, Corp.
|
| APT5024SLL APT5024BLL |
Volts:500V RDS(ON):0.24Ohms ID(cont:)22Amps|MOSFETs 电压00V电压的RDS（ON）：0.24Ohms编号（续：）22安培| MOSFET
|
Advanced Power Technology, Ltd.
|
| NDH853N |
Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity N Channel Current Id cont. 7.6 A Voltage Vgs th max. 4.5 V Voltage Vds max 30 V
N-Channel Enhancement Mode Field Effect Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRS2332JTRPBF IRS2330D |
High Voltage High Speed power MOSFET and IGBT Driver. Compatible down to 3.3V Logic. Deadtime 0.7us.
High Voltage High Speed power MOSFET and IGBT Driver with Integrated Bootstrap Diode. Compatible down to 3.3V Logic. Deadtime 2.0us.
|
International Rectifier
|
| AUIRS2112S |
The AUIRS2112S is a high voltage, high speed power MOSFET and IGBT driver with independent high- and lowside referenced output channels.
|
International Rectifier
|
